central semiconductor corp. tm process CP611 power transistor pnp - amp/switch transistor chip princip al device types cjd42c tip42c process epitaxial base die size 80 x 99 mils die thickness 12.5 1 mils base bonding pad area 12 x 32 mils emitter bonding pad area 13 x 46 mils top side metalization al - 50,000? back side metalization cr/ni/ag - 16,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r3 (21-september 2003) gross die per 4 inch w afer 1,450
central semiconductor corp. tm process CP611 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (21-september 2003)
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